发明公开
- 专利标题： THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAYER DAMAGE
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申请号： US18486576申请日： 2023-10-13
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公开(公告)号： US20240237337A9公开(公告)日： 2024-07-11
- 发明人: Jaesoo Ahn , Jose Alexandro Romero , Kunal Bhatnagar , Mahendra Pakala
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H10B43/20
- IPC分类号： H10B43/20 ; H01L21/02
摘要：
A method includes obtaining a base structure of a three-dimensional (3D) memory device, forming, on the base structure, a blocking layer including a high-k dielectric material, and forming, on the blocking layer, a wordline for the 3D memory device including molybdenum using an atomic layer deposition (ALD) process.
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