- 专利标题： APPARATUS AND METHOD FOR MEASURING A LAYER OF A SEMICONDUCTOR DEVICE USING X-RAY DIFFRACTION
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申请号： US18460675申请日： 2023-09-04
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公开(公告)号： US20240241067A1公开(公告)日： 2024-07-18
- 发明人: Seungchul Lee , Younghoon Sohn
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR SUWON-SI
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR SUWON-SI
- 优先权： KR 20230004984 2023.01.12
- 主分类号： G01N23/223
- IPC分类号： G01N23/223 ; G01N23/207 ; H01L21/66
摘要：
An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the X-rays diffracted from the specimen.
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