Invention Publication
- Patent Title: DEVICE OF DIELECTRIC LAYER
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Application No.: US18434553Application Date: 2024-02-06
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Publication No.: US20240249947A1Publication Date: 2024-07-25
- Inventor: Yu-Yun PENG , Chung-Chi KO , Keng-Chu LIN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US17200133 2021.03.12
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/02 ; H01L21/762

Abstract:
A device includes a first dielectric layer, a first conductor, an etch stop layer, a second dielectric layer, and a second conductor. The first conductor is in the first dielectric layer. The etch stop layer is over the first dielectric layer. The etch stop layer has a first surface facing the first dielectric layer and a second surface facing away from the first dielectric layer, and a concentration of carbon in the etch stop layer periodically varies from the first surface to the second surface. The second dielectric layer is over the etch stop layer. The second conductor is in the second dielectric layer and the etch stop layer and electrically connected to the first conductor.
Information query
IPC分类: