A substrate holding method includes loading a first substrate into a first chamber and placing the first substrate on an electrostatic chuck disposed in the first chamber; applying a first voltage to an electrostatic electrode of the electrostatic chuck to attract the first substrate to the electrostatic chuck; unloading the electrostatic chuck from the first chamber; grinding a front surface of the electrostatic chuck; disposing the electrostatic chuck in a second chamber; placing the second substrate on the electrostatic chuck disposed in the second chamber; applying a second voltage smaller than the first voltage to the electrostatic electrode to attract the second substrate to the electrostatic chuck; and before the attracting of the second substrate, calculating a value of the second voltage by using a value of the first voltage and a value of a thickness of a dielectric of the electrostatic chuck disposed in the second chamber.