发明公开
- 专利标题: GAS SUPPLY SYSTEM
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申请号: US18419021申请日: 2024-01-22
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公开(公告)号: US20240279808A1公开(公告)日: 2024-08-22
- 发明人: Minsoo PARK , Songyi BAEK , Hyungwoo CHOI
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20230023026 2023.02.21 KR 20230082622 2023.06.27
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/44 ; C23C16/448 ; C23C16/52
摘要:
A gas supply system includes a manifold for supplying gases for processing the substrate to a process chamber; a cleaning gas supply line supplying a cleaning gas to the manifold; a first inert gas supply line supplying a first inert gas to the cleaning gas supply line; a first opening/closing valve opening and closing the cleaning gas supply line; a reaction gas supply line supplying a reaction gas to the manifold; a source gas supply line provided with a vaporizer and supplying the source gas to the manifold; a second inert gas supply line supplying a second inert gas to the manifold and branching out to a carrier gas supply line connected to the vaporizer and a curtain gas supply line bypassing the vaporizer; a second opening/closing valve selectively opening or closing the carrier gas supply line and the curtain gas supply line; and a controller.
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IPC分类: