A semiconductor device includes: a package substrate; a first die on the package substrate and including a hard macro and through silicon vias; and a second die on the first die, wherein the first die includes a first region, which does not include the hard macro, and a second region including a macro-region that includes the hard macro, wherein the through silicon vias of the first region are arranged in a first direction with a first distance and in a second direction with a second distance, wherein the through silicon vias of the second region are arranged in the first direction with a first pitch, and in the second direction with a second pitch, wherein the macro-region is interposed between the through silicon vias arranged in the first direction, wherein the first pitch is greater than the first distance, and wherein the second pitch is less than the second distance.