发明公开
- 专利标题： NONLINEAR CHANNEL
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申请号： US18171528申请日： 2023-02-20
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公开(公告)号： US20240282860A1公开(公告)日： 2024-08-22
- 发明人: Ruilong Xie , Julien Frougier , Susan Ng Emans , Andrew M. Greene
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/308 ; H01L29/66
摘要：
A finFET that includes a nonlinear channel is presented. The nonlinear channel includes one or more arced, curved, segmented, or the like, sidewall(s) that define a channel width and a channel length. The nonlinear channel provides a relatively increased channel length compared to a linear fin that is orientated orthogonal to the gate width. As such, channel length of the nonlinear channel may be relatively increased within the confines of the gate. In other words, short channel effects may be limited due to a reduced electric field along the nonlinear channel due to the relatively increased channel or fin length within the footprint of the gate.
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