- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
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申请号： US18236925申请日： 2023-08-22
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公开(公告)号： US20240297220A1公开(公告)日： 2024-09-05
- 发明人: Masatsugu NAGAI , Shingo SATO
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP 23033003 2023.03.03
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/265 ; H01L21/285 ; H01L29/45 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor device includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. The semiconductor layer includes first to third semiconductor regions. The connection region is positioned between the first electrode and the first semiconductor region. The connection region includes a compound of a first metallic element and Si, and a compound of Pt and Si. The first metallic element is at least one selected from the group consisting of Ti, V, Cr, Zr, Mo, Hf, Ta, and W. The connection region includes a first part adjacent to an n-type region of the semiconductor layer in a first direction. A peak position of a concentration distribution of the first metallic element in the first direction of the first part is between the n-type region and a peak position of a concentration distribution of Pt in the first direction of the first part.
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