发明公开
- 专利标题: VAPOR CHAMBER SYSTEM
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申请号: US18668253申请日: 2024-05-20
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公开(公告)号: US20240302108A1公开(公告)日: 2024-09-12
- 发明人: Shwin-Chung Wong
- 申请人: National Tsing Hua University
- 申请人地址: TW Hsinchu City
- 专利权人: National Tsing Hua University
- 当前专利权人: National Tsing Hua University
- 当前专利权人地址: TW Hsinchu City
- 优先权: TW 8145459 2019.12.12
- 分案原申请号: US16782020 2020.02.04
- 主分类号: F28D15/04
- IPC分类号: F28D15/04 ; F28D15/02 ; H05K7/20
摘要:
A vapor chamber system, includes a heat source and a vapor chamber device. The vapor chamber device includes a first casing, a second casing, a second capillary structure and a third capillary structure. The first casing includes a first plate, and a first capillary structure. The second casing is stacked on the first casing. The second capillary structure is disposed between the first capillary structure and the supporting posts of the second casing. The third capillary structure is disposed at a zone of the inner surface of the first plate, the zone is within a projection of the heat source projected onto the inner surface, and an area of the zone is smaller than an area of the projection of the heat source.
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