- 专利标题: LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS
-
申请号: US18675505申请日: 2024-05-28
-
公开(公告)号: US20240310735A1公开(公告)日: 2024-09-19
- 发明人: Ming-Hui WENG , Ching-Yu CHANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F7/40
- IPC分类号: G03F7/40 ; G03F1/56 ; G03F7/039 ; H01L21/027
摘要:
A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.
信息查询
IPC分类: