发明公开
- 专利标题: SEMICONDUCTOR DEVICES
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申请号: US18388266申请日: 2023-11-09
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公开(公告)号: US20240315005A1公开(公告)日: 2024-09-19
- 发明人: Kiseok LEE , Sangjae PARK , Huijung KIM , Taejin PARK , Chansic YOON , Myeongdong LEE
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20230032573 2023.03.13
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A semiconductor device includes an active pattern array including active patterns on a substrate; a first contact structure on a central portion of each active pattern; a bit line structure on the first contact structure; a second contact structure on an end of each active pattern; a third contact structure on the second contact structure; and a capacitor electrically connected to the third contact structure, wherein the active pattern array includes active pattern rows spaced apart from each other in a second direction parallel the substrate, the active pattern rows include active patterns spaced apart from each other in a first direction parallel to the substrate, the active patterns extend in a third direction having an acute angle with the first/second directions, the active patterns in the rows are aligned in the first direction, and the second contact structure has a rectangular shape in a plan view.
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