There is provided an semiconductor device comprising: a main element having an upper-surface electrode; a first proximal wiring line connected to the upper-surface electrode; and a first sense wiring line that transmits potential at the first sense position on the upper-surface electrode, wherein the first proximal wiring line is connected to the first proximal position on the upper-surface electrode, and on the upper-surface electrode, a first inter-wiring line distance that is from the first sense position to the first proximal position is different from a half of a maximum distance that is from the first proximal position to an end of the upper-surface electrode.