- 专利标题： SEMICONDUCTOR DECIVE AND PRODUCTION METHOD THEREFOR
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申请号： US18602855申请日： 2024-03-12
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公开(公告)号： US20240332361A1公开(公告)日： 2024-10-03
- 发明人: Kimiyasu IDE
- 申请人： TOYODA GOSEI CO., LTD.
- 申请人地址： JP Kiyosu-shi
- 专利权人： TOYODA GOSEI CO., LTD.
- 当前专利权人： TOYODA GOSEI CO., LTD.
- 当前专利权人地址： JP Kiyosu-shi
- 优先权： JP 23053329 2023.03.29
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/306 ; H01L29/20 ; H01L29/66 ; H01L29/778
摘要：
The present invention realizes a semiconductor device capable of forming a good contact with a 2DEG layer. The semiconductor device includes a recess formed in a partial region of a surface of the barrier layer and having a depth reaching the channel layer, and an electrode formed to cover along the recess. The recess has a first side surface being an exposed surface of the barrier layer and having an angle with respect to a main surface of the substrate, a terrace continuing to the first side surface and being an exposed surface of the channel layer, and a second side surface continuing to the terrace, being an exposed surface of the channel layer, and having an inclination angle smaller than the angle of the first side surface with respect to the main surface of the substrate.
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