- 专利标题: SILICON-CARBON COMPOSITE MATERIAL AND PREPARATION METHOD THEREOF, ELECTROCHEMICAL DEVICE, ELECTRONIC DEVICE
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申请号: US18506034申请日: 2023-11-09
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公开(公告)号: US20240332503A1公开(公告)日: 2024-10-03
- 发明人: Ruonan Li
- 申请人: AESC Japan Ltd.
- 申请人地址: JP Kanagawa
- 专利权人: AESC Japan Ltd.
- 当前专利权人: AESC Japan Ltd.
- 当前专利权人地址: JP Kanagawa
- 优先权: CN 2310320127.0 2023.03.27
- 主分类号: H01M4/36
- IPC分类号: H01M4/36 ; H01M4/133 ; H01M4/134 ; H01M4/38 ; H01M4/587 ; H01M10/0525
摘要:
Disclosed is a silicon-carbon composite material, a preparation method thereof, an electrochemical device and an electronic device. The silicon-carbon composite material includes an amorphous carbon matrix and a silicon material located on the surface and/or in the interior the amorphous carbon matrix, and has specific surface area coefficient B is 20-1250. The preparation method includes synthesizing the amorphous carbon matrix material with silicon source through chemical vapor deposition to obtain the silicon-carbon composite material. The disclosure limits the expansion of the silicon-based material to the greatest possible extent, ensures its long cycle stability and excellent conductive properties, and effectively improves the capacity and first effect of the finished material. The material preparation process is simple and suitable for industrial production.
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