公开(公告)号：US20240332502A1

公开(公告)日：2024-10-03

申请号：US18488044

申请日：2023-10-17

申请人： AESC Japan Ltd.

发明人： Peng Huang ,  Ruonan Li ,  Zhonggui Sun ,  Huayu Sun

IPC分类号： H01M4/36 ,  C01G53/00 ,  H01G11/32 ,  H01G11/66 ,  H01G11/86 ,  H01M4/133 ,  H01M4/134 ,  H01M4/38 ,  H01M4/587 ,  H01M10/0525

CPC分类号： H01M4/366 ,  C01G53/50 ,  H01G11/32 ,  H01G11/66 ,  H01G11/86 ,  H01M4/133 ,  H01M4/134 ,  H01M4/386 ,  H01M4/587 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027

摘要： A silicon-carbon composite material, a preparation method thereof, an electrochemical device, and an electronic apparatus are provided. The silicon-carbon composite material includes an inner core and a carbon coating layer. The inner core includes a carbon substrate and silicon and carbon nanoparticles attached to a surface of the carbon substrate and/or an inner portion of the carbon substrate. An accessible porosity R is 20% to 80%. The preparation method includes co-depositing, by using a gaseous carbon source/silicon source carbon, carbon and silicon on the carbon substrate through a first chemical vapor deposition and forming, by using a carbon source, the carbon coating layer on a surface through a second chemical vapor deposition.

公开(公告)号：US20240332518A1

公开(公告)日：2024-10-03

申请号：US18476208

申请日：2023-09-27

申请人： AESC Japan Ltd.

发明人： Peng Huang ,  Ruonan Li ,  Zhonggui Sun ,  Huayu Sun

IPC分类号： H01M4/38 ,  H01M4/04

CPC分类号： H01M4/386 ,  H01M4/0404 ,  H01M4/0428 ,  H01M2004/021 ,  H01M2004/027

摘要： A silicon-carbon composite material, a preparation method thereof, an electrochemical device, and an electronic apparatus are provided. The silicon-carbon composite material includes a carbon substrate, a silicon material attached to a surface of the carbon substrate and/or an inner portion of the carbon substrate, and a nonmetal element doped on the carbon substrate. Covalent bond energy formed by the nonmetal element and a carbon element in is 180 eV≤E1≤700 eV or 130 eV≤E2≤210 eV.

公开(公告)号：US20240332503A1

公开(公告)日：2024-10-03

申请号：US18506034

申请日：2023-11-09

申请人： AESC Japan Ltd.

发明人： Ruonan Li

IPC分类号： H01M4/36 ,  H01M4/133 ,  H01M4/134 ,  H01M4/38 ,  H01M4/587 ,  H01M10/0525

CPC分类号： H01M4/366 ,  H01M4/133 ,  H01M4/134 ,  H01M4/386 ,  H01M4/587 ,  H01M10/0525 ,  H01G11/32 ,  H01G11/50 ,  H01G11/86 ,  H01M2004/027

摘要： Disclosed is a silicon-carbon composite material, a preparation method thereof, an electrochemical device and an electronic device. The silicon-carbon composite material includes an amorphous carbon matrix and a silicon material located on the surface and/or in the interior the amorphous carbon matrix, and has specific surface area coefficient B is 20-1250. The preparation method includes synthesizing the amorphous carbon matrix material with silicon source through chemical vapor deposition to obtain the silicon-carbon composite material. The disclosure limits the expansion of the silicon-based material to the greatest possible extent, ensures its long cycle stability and excellent conductive properties, and effectively improves the capacity and first effect of the finished material. The material preparation process is simple and suitable for industrial production.