- 专利标题： SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE
-
申请号： US18751953申请日： 2024-06-24
-
公开(公告)号： US20240347635A1公开(公告)日： 2024-10-17
- 发明人: Hung-Li CHIANG , Yu-Chao LIN , Chao-Ching CHENG , Tzu-Chiang CHEN , Tung-Ying LEE
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US16930839 2020.07.16
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8234 ; H01L29/06 ; H01L29/417 ; H01L29/66
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first nanostructure over the substrate. The semiconductor device structure includes a gate stack over the substrate and surrounding the first nanostructure. The semiconductor device structure includes a first source/drain structure and a second source/drain structure over the substrate. The gate stack is between the first source/drain structure and the second source/drain structure. The semiconductor device structure includes an inner spacer layer covering a sidewall of the first source/drain structure and partially between the gate stack and the first source/drain structure. The first nanostructure passes through the inner spacer layer. The semiconductor device structure includes a dielectric structure over the gate stack and extending into the inner spacer layer. The dielectric structure covers a top surface, an inner wall, and a lower surface of the inner spacer layer.
信息查询
IPC分类:
