发明公开
- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR
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申请号: US18292340申请日: 2022-08-18
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公开(公告)号: US20240349629A1公开(公告)日: 2024-10-17
- 发明人: Yajun ZHANG , Tingying SHEN , Lijun SHAN , Taiwei CHIU , Yu LIU , Szu-chun KANG
- 申请人: XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- 申请人地址: CN Xiamen
- 专利权人: XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- 当前专利权人: XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- 当前专利权人地址: CN Xiamen
- 优先权: CN 2111503891.9 2021.12.10
- 国际申请: PCT/CN2022/113246 2022.08.18
- 进入国家日期: 2024-01-26
- 主分类号: H10N70/00
- IPC分类号: H10N70/00 ; H10B63/00
摘要:
A semiconductor integrated circuit device includes a resistive layer having a trench-like structure with an upward opening, a first electrode located on an outer side of the resistive layer, and a second electrode located on an inner side of the resistive layer; the first electrode and the second electrode are opposite to each other on two sides of a sidewall of the resistive layer; and the resistive layer, the first electrode and the second electrode form a first memory cell. A manufacturing method includes forming a first electrode on a substrate, the substrate including a first via connected with a first metal layer; etching a recess in the first electrode at a position staggered from the first via and forming a resistive layer in the recess; and forming a second electrode in the opening of the resistive layer to obtain a first memory cell.
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