- 专利标题: PROJECTION TWO-PHOTON LITHOGRAPHY METHOD AND SYSTEM FOR RAPID PRINTING OF 3D STRUCTURES WITH SUB-MICROMETER FEATURES AND POROSITIES
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申请号: US18608097申请日: 2024-03-18
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公开(公告)号: US20240351272A1公开(公告)日: 2024-10-24
- 发明人: Sourabh Kumar Saha , Harnjoo Kim , Rushil Pingali
- 申请人: Georgia Tech Research Corporation
- 申请人地址: US GA Atlanta
- 专利权人: Georgia Tech Research Corporation
- 当前专利权人: Georgia Tech Research Corporation
- 当前专利权人地址: US GA Atlanta
- 主分类号: B29C64/135
- IPC分类号: B29C64/135 ; B29C64/273 ; B33Y10/00 ; B33Y30/00 ; B33Y70/00
摘要:
Systems, methods, devices, and compositions of matter for 3D printing methods and systems that can be used for rapid nanoscale 3D printing of large and deterministic 3D structures with sub-micrometer features and porosities. The method includes storing or determining a plurality of interspersed features for a three-dimensional (3D) structure to project as a sequence of sparse images on the same plane to generate closely spaced fine features on a polymer resist; and generating, using the sequence of sparse images, a plurality of patterned light sheet on the polymer resist with a temporally-focused femtosecond pulse, the light sheet having patterns.
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