- 专利标题: TRACKING AND/OR PREDICTING SUBSTRATE YIELD DURING FABRICATION
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申请号: US18639045申请日: 2024-04-18
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公开(公告)号: US20240354485A1公开(公告)日: 2024-10-24
- 发明人: Keith Frank Best , Jian Lu , Prasad Bachiraju
- 申请人: Onto Innovation Inc.
- 申请人地址: US MA Wilmington
- 专利权人: Onto Innovation Inc.
- 当前专利权人: Onto Innovation Inc.
- 当前专利权人地址: US MA Wilmington
- 主分类号: G06F30/398
- IPC分类号: G06F30/398 ; G03F7/00 ; G03F9/00 ; G06F119/22
摘要:
Tracking and/or predicting the yield of a semiconductor process. In an embodiment, a tracking method monitors the yield at each layer of the process. This can be used to determine how to proceed. In an embodiment, the prediction method measures the values of at least one attribute of each conductive via on a substrate before the lithography process. The measured values are then compared to predefined values for the same attribute, to determine any deviation. Based on this comparison, an overlay yield of the lithography process is predicted.
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