发明公开
- 专利标题： SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTKY METAL
-
申请号： US18760960申请日： 2024-07-01
-
公开(公告)号： US20240355886A1公开(公告)日： 2024-10-24
- 发明人: Yasuhiro KAWAKAMI
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto-shi
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto-shi
- 优先权： JP 12129219 2012.06.06
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L21/04 ; H01L29/417 ; H01L29/47 ; H01L29/66 ; H01L29/872
摘要：
A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
信息查询
IPC分类:
