- 专利标题: SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE
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申请号: US18245900申请日: 2021-07-28
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公开(公告)号: US20240357260A1公开(公告)日: 2024-10-24
- 发明人: MAMORU SATO , HIDEKI NAGANUMA
- 申请人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址: JP KANAGAWA
- 专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人地址: JP KANAGAWA
- 优先权: JP 20161603 2020.09.28
- 国际申请: PCT/JP2021/027900 2021.07.28
- 进入国家日期: 2023-03-20
- 主分类号: H04N25/778
- IPC分类号: H04N25/778 ; H01L27/146 ; H04N25/709
摘要:
To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.
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