公开(公告)号：US20240284075A1

公开(公告)日：2024-08-22

申请号：US18292726

申请日：2022-01-31

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： HIDEKI NAGANUMA ,  TAKUYA TOYOFUKU

IPC分类号： H04N25/78 ,  H04N25/616 ,  H04N25/673 ,  H04N25/771

CPC分类号： H04N25/78 ,  H04N25/616 ,  H04N25/673 ,  H04N25/771

摘要： To improve the image quality in a solid-state imaging element that performs differential amplification. Each of a plurality of reference pixels is provided with a reference-side amplifier transistor that supplies a reference current according to a predetermined reference potential. Each of a plurality of readout pixel circuits is provided with a readout-side amplifier transistor that supplies from a drain to a source a signal current according to a difference between a potential of a gate and the reference potential. Further, in a potential difference generation unit, a plurality of source follower transistors are arranged for each of columns of the readout pixel circuits, each source follower transistor controlling a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

公开(公告)号：US20220141411A1

公开(公告)日：2022-05-05

申请号：US17435427

申请日：2019-11-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： MAMORU SATO ,  AKIHIKO KATO ,  YUSUKE OIKE ,  HIDEHIRO HARATA ,  HIDEKI NAGANUMA

IPC分类号： H04N5/378 ,  H01L27/146 ,  H04N5/365

摘要： To improve charge transfer efficiency in a solid-state imaging device that transfers a charge from a photoelectric conversion element to a floating diffusion layer. A solid-state imaging device is provided with a transfer transistor and a potential control unit. In this solid-state imaging device, the transfer transistor transfers a charge from a photoelectric conversion element to a floating diffusion layer in a predetermined transfer period according to a transfer signal transmitted through a predetermined transfer line. Furthermore, the potential control unit makes a potential in a transfer period of a predetermined signal line capacitively coupled with the floating diffusion layer higher than that outside the transfer period.

公开(公告)号：US20240357260A1

公开(公告)日：2024-10-24

申请号：US18245900

申请日：2021-07-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： MAMORU SATO ,  HIDEKI NAGANUMA

IPC分类号： H04N25/778 ,  H01L27/146 ,  H04N25/709

CPC分类号： H04N25/778 ,  H01L27/14614 ,  H04N25/709

摘要： To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.