- 专利标题： MICROELECTRONIC DEVICES AND MEMORY DEVICES INCLUDING VERTICALLY SPACED TRANSISTORS AND STORAGE DEVICES, AND RELATED ELECTRONIC SYSTEMS
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申请号： US18619425申请日： 2024-03-28
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公开(公告)号： US20240357793A1公开(公告)日： 2024-10-24
- 发明人: Fatma Arzum Simsek-Ege
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H10B12/00
- IPC分类号： H10B12/00
摘要：
A microelectronic device comprises a first transistor structure, a second transistor structure vertically overlying the first transistor structure, a storage device vertically overlying the second transistor structure, a first conductive contact structure contacting the first transistor structure, the second transistor structure, and a first electrode of the storage device, and a second conductive contact structure configured to be in electrical communication with the first transistor structure and the second transistor structure. Related memory devices and electronic systems are also described.
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