发明公开
- 专利标题: POWER MODULE
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申请号: US18770232申请日: 2024-07-11
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公开(公告)号: US20240363595A1公开(公告)日: 2024-10-31
- 发明人: Kenichi ONODERA , Soichiro TAKAHASHI
- 申请人: ROHM CO., LTD.
- 申请人地址: JP Kyoto-shi
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto-shi
- 优先权: JP 19150978 2019.08.21
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H01L23/00 ; H01L23/053 ; H01L23/14 ; H01L23/15 ; H01L23/31 ; H01L23/367 ; H01L23/49
摘要:
A power module includes a first end power semiconductor element and a second end power semiconductor element. A first sum is a sum of a path length between the gate electrode of the first end power semiconductor element and a first control terminal and a path length between the source electrode of the first end power semiconductor element and a first detection terminal. A second sum is a sum of a path length between the gate electrode of the second end power semiconductor element and the first control terminal and a path length between the source electrode of the second end power semiconductor element and the first detection terminal. The power module includes a first control layer connected to the gate electrode. The first control layer includes a first detour portion that detours the path to reduce a difference between the first sum and the second sum.
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IPC分类: