- 专利标题： MEMORY DEVICE, MEMORY ARRAY, AND N-BIT MEMORY UNIT
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申请号： US18764340申请日： 2024-07-04
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公开(公告)号： US20240365689A1公开(公告)日： 2024-10-31
- 发明人: Hung-Li Chiang , Jer-Fu Wang , Tzu-Chiang Chen , Meng-Fan Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H10N70/20
- IPC分类号： H10N70/20 ; G11C13/00 ; H10N70/00
摘要：
The disclosure provides a memory device, a memory array, and an N-bit memory unit. The memory device includes a memory array including an N-bit memory unit, wherein N is a positive integer. The N-bit memory unit includes a first memory cell, used to characterize at least two first bits of a plurality of least significant bits of the N-bit memory unit.
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