The present disclosure is directed to monitoring the integrity of the thermal interface material (TIM) of a semiconductor device directly by a monitoring component of a motherboard, a system on chip (SOC), or a remote device to measure either the electrical resistivity or capacitive property of the TIM, depending on the type of TIM being used, as a means to directly assess the thermal properties (conductivity, resistance, and/or impedance) of the TIM as it ages. In an aspect, the electrical resistivity or capacitive property of the TIM may be initially measured and charted, and thereafter, the changes in the electrical resistivity or capacitive property may be sensed by the monitoring component and, based on the delta of those changes, there may be remedial actions taken to mitigate impacts to the overall system performance and/or to prevent irreparable damage to the semiconductor device/system.