Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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Application No.: US18314908Application Date: 2023-05-10
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Publication No.: US20240379791A1Publication Date: 2024-11-14
- Inventor: TA-CHUAN LIAO , CHEN-LIANG CHU , HSIN-CHIH CHIANG , MING-TA LEI , TA-YUAN KUNG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW HSINCHU
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW HSINCHU
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L29/78

Abstract:
A semiconductor structure includes semiconductor structure includes a metal gate structure, a plurality of dielectric pillars disposed in the metal gate structure, a source/drain structure disposed at tow side of the metal gate structure, and at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure. The first connecting structure overlaps the one of the dielectric pillars entirely from a top view. An area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.
Information query
IPC分类: