Embodiments disclosed can include determining, for each wordline group of one or more wordline groups of the plurality of wordlines, a target adjustment to a parameter of a memory access operation that is performed with respect to a memory cell associated with a wordline of the wordline group; and responsive to determining that an aggregate read window budget (RWB) increase for the block satisfies a threshold range associated with a target RWB increase, modifying the parameter of the memory access operation according to the target adjustment, wherein the target RWB increase is determined using a different PV voltage offset for each respective programming level of the memory cell associated with the wordline of the wordline group.