The present disclosure provides a high-speed vertical cavity surface emitting laser, an optoelectronic device with the same, and a manufacturing method thereof. The high-speed vertical cavity surface emitting laser includes a substrate layer, a first electrode layer, a first reflector layer, an active layer, an oxide-confined layer, a second reflector layer and a second electrode layer, wherein the first electrode layer is an N-type electrode layer and the second electrode layer is a P-type electrode layer. The oxidation aperture in the oxide-confined layer is drop-shaped.