Invention Application
- Patent Title: MULTIPLE WRITE PROGRAMMING FOR A SEGMENT OF A MEMORY DEVICE
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Application No.: US18781838Application Date: 2024-07-23
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Publication No.: US20250077416A1Publication Date: 2025-03-06
- Inventor: Huai-Yuan Tseng , Xiangyu Tang , Eric N. Lee , Haibo Li , Kishore Kumar Muchherla , Akira Goda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A memory device can include a memory array including memory cells arranged in one or more pages. The memory array can be coupled to control logic to receive a first request to write first data to a page of the one or more pages and program the first data to the page of the one or more pages at a first time responsive to receiving the first request. The control logic is further to receive a second request to write second data to the page of the one or more pages, read the page of the one or more pages, and program the second data to the page of the one or more pages at a second time responsive to receiving the second request. The control logic can also receive an erase request to erase the one or more pages after the second time.
Public/Granted literature
- US2168960A Clutch mechanism Public/Granted day:1939-08-08
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