Halide-functionalized cyclotrisilazane precursor compounds according to Formulae A and B, and methods using the same, for depositing a silicon-containing film such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, and combinations thereof.