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公开(公告)号：US11035039B2
公开(公告)日：2021-06-15
申请号：US15745275
申请日：2016-07-28
发明人： Xinjian Lei , Moo-Sung Kim , Manchao Xiao
IPC分类号： C23C16/455 , C23C16/34 , H01L21/02
摘要： Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.
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公开(公告)号：US10991571B2
公开(公告)日：2021-04-27
申请号：US16255464
申请日：2019-01-23
发明人： Haripin Chandra , Meiliang Wang , Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Mark Leonard O'Neill
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C07F7/10
摘要： Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.
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公开(公告)号：US20210017339A1
公开(公告)日：2021-01-21
申请号：US17036193
申请日：2020-09-29
发明人： Manchao Xiao , Matthew R. MacDonald , Xinjian Lei , Meiliang Wang
IPC分类号： C08G77/26 , C23C16/455 , C08G77/06 , C07F7/18 , C23C16/40 , C07F7/10 , C07F7/21 , C08L83/08 , C08G77/04
摘要： Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.
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公开(公告)号：US10822458B2
公开(公告)日：2020-11-03
申请号：US15883815
申请日：2018-01-30
发明人： Manchao Xiao , Matthew R. MacDonald , Xinjian Lei , Meiliang Wang
IPC分类号： C08G77/26 , C23C16/455 , C08G77/06 , C07F7/18 , C23C16/40 , C07F7/10 , C07F7/21 , C08L83/08 , C08G77/04
摘要： Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.
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5.发明申请公开(公告)号：US20200075323A1
公开(公告)日：2020-03-05
申请号：US16549634
申请日：2019-08-23
发明人： Manchao Xiao , Robert Gordon Ridgeway , Daniel P. Spence , Xinjian Lei , Raymond Nicholas Vrtis
IPC分类号： H01L21/02
摘要： A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
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公开(公告)号：US20200040192A9
公开(公告)日：2020-02-06
申请号：US15698794
申请日：2017-09-08
发明人： Xinjian Lei , Meiliang Wang , Matthew R. MacDonald , Richard Ho , Manchao Xiao , Suresh Kalpatu Rajaraman
摘要： Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.
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公开(公告)号：US10464953B2
公开(公告)日：2019-11-05
申请号：US15725122
申请日：2017-10-04
摘要： Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A: wherein R, R1, R2, R3, R4, and R5 are defined herein.
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8.发明申请公开(公告)号：US20190233446A1
公开(公告)日：2019-08-01
申请号：US16376548
申请日：2019-04-05
发明人： Matthew R. MacDonald , Xinjian Lei , Manchao Xiao , Meiliang Wang
IPC分类号： C07F7/21
CPC分类号： C07F7/21
摘要： Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.
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公开(公告)号：US20180127592A1
公开(公告)日：2018-05-10
申请号：US15698794
申请日：2017-09-08
发明人： Xinjian Lei , Meiliang Wang , Matthew R. MacDonald , Richard Ho , Manchao Xiao , Suresh Kalpatu Rajaraman
摘要： Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.
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10.发明授权公开(公告)号：US11049714B2
公开(公告)日：2021-06-29
申请号：US16135363
申请日：2018-09-19
发明人： Matthew R. MacDonald , Manchao Xiao
摘要： Described herein are novel silyl-substituted hydrazine and silyl-substituted diamine precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.
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