公开(公告)号：US20240287257A1

公开(公告)日：2024-08-29

申请号：US18613569

申请日：2024-03-22

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Xinjian Lei ,  Meiliang Wang

IPC: C08G77/26 ,  C07F7/10 ,  C07F7/18 ,  C07F7/21 ,  C08G77/04 ,  C08G77/06 ,  C08L83/08 ,  C23C16/40 ,  C23C16/455

CPC classification number: C08G77/26 ,  C07F7/10 ,  C07F7/1888 ,  C07F7/21 ,  C08G77/045 ,  C08G77/06 ,  C08L83/08 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45553 ,  C08G2390/40

Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

公开(公告)号：US11725111B2

公开(公告)日：2023-08-15

申请号：US17507771

申请日：2021-10-21

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: C23C16/30 ,  C09D7/63 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C07F7/10 ,  H01L21/02

CPC classification number: C09D7/63 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US11035039B2

公开(公告)日：2021-06-15

申请号：US15745275

申请日：2016-07-28

Applicant: Versum Materials US, LLC

Inventor： Xinjian Lei ,  Moo-Sung Kim ,  Manchao Xiao

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/02

Abstract: Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

公开(公告)号：US10991571B2

公开(公告)日：2021-04-27

申请号：US16255464

申请日：2019-01-23

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10

Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

公开(公告)号：US20210017339A1

公开(公告)日：2021-01-21

申请号：US17036193

申请日：2020-09-29

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Xinjian Lei ,  Meiliang Wang

IPC: C08G77/26 ,  C23C16/455 ,  C08G77/06 ,  C07F7/18 ,  C23C16/40 ,  C07F7/10 ,  C07F7/21 ,  C08L83/08 ,  C08G77/04

Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

公开(公告)号：US10822458B2

公开(公告)日：2020-11-03

申请号：US15883815

申请日：2018-01-30

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Xinjian Lei ,  Meiliang Wang

IPC: C08G77/26 ,  C23C16/455 ,  C08G77/06 ,  C07F7/18 ,  C23C16/40 ,  C07F7/10 ,  C07F7/21 ,  C08L83/08 ,  C08G77/04

Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

公开(公告)号：US20200075323A1

公开(公告)日：2020-03-05

申请号：US16549634

申请日：2019-08-23

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Robert Gordon Ridgeway ,  Daniel P. Spence ,  Xinjian Lei ,  Raymond Nicholas Vrtis

IPC: H01L21/02

Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

公开(公告)号：US20200040192A9

公开(公告)日：2020-02-06

申请号：US15698794

申请日：2017-09-08

Applicant: Versum Materials US, LLC

Inventor： Xinjian Lei ,  Meiliang Wang ,  Matthew R. MacDonald ,  Richard Ho ,  Manchao Xiao ,  Suresh Kalpatu Rajaraman

IPC: C09D1/00 ,  C01B33/12 ,  C07F7/10 ,  C07F7/02 ,  C23C16/40 ,  C23C16/455

Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

公开(公告)号：US10464953B2

公开(公告)日：2019-11-05

申请号：US15725122

申请日：2017-10-04

Applicant: Versum Materials US, LLC

Inventor： Meiliang Wang ,  Xinjian Lei ,  Manchao Xiao ,  Suresh Kalpatu Rajaraman

IPC: H01L21/31 ,  C07F7/10 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02

Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A: wherein R, R1, R2, R3, R4, and R5 are defined herein.

公开(公告)号：US20190233446A1

公开(公告)日：2019-08-01

申请号：US16376548

申请日：2019-04-05

Applicant: Versum Materials US, LLC

Inventor： Matthew R. MacDonald ,  Xinjian Lei ,  Manchao Xiao ,  Meiliang Wang

IPC: C07F7/21

CPC classification number: C07F7/21

Abstract: Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.