Invention Grant
- Patent Title: Method for forming pn junctions in indium antimonide with special application to infrared detection
- Patent Title (中): 在锑化锑中形成pn结的方法，特别适用于红外检测
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Application No.: US33021663Application Date: 1963-11-05
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Publication No.: US3217379APublication Date: 1965-11-16
- Inventor: MESECKE CURTIS M
- Applicant: TEXAS INSTRUMENTS INC
- Assignee: Texas Instruments Inc
- Current Assignee: Texas Instruments Inc
- Priority: US33021663 1963-11-05; US7483060 1960-12-09
- Main IPC: F17C3/08
- IPC: F17C3/08 ; G01J5/28 ; H01L21/306 ; H01L31/00
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