Invention Grant
- Patent Title: Transistor with limited area basecollector junction
- Patent Title (中): 晶体管有限区域底层电极结
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Application No.: US32238363Application Date: 1963-11-08
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Publication No.: US3312881APublication Date: 1967-04-04
- Inventor: YU HWA N
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US32238363 1963-11-08
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L29/732
Information query
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