发明授权
- 专利标题： Method of treating semiconductor devices to improve lifetime
- 专利标题（中）： 处理半导体器件以改善生命的方法
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申请号： US3556880D申请日： 1968-04-11
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公开(公告)号： US3556880A公开(公告)日： 1971-01-19
- 发明人: HEIMAN FREDERIC P , ROBINSON PAUL H
- 申请人： RCA CORP
- 专利权人： RCA Corp
- 当前专利权人： RCA Corp
- 优先权： US31774372 1972-12-22; US72053868 1968-04-11
- 主分类号： H01J29/45
- IPC分类号： H01J29/45 ; H01L21/00 ; H01L23/29 ; H01L27/00 ; H01L7/34 ; H01L7/44
摘要：
THE STABILITY AND LIFETIME OF A DEVICE COMPRISING A SEMICONDUCTOR BODY COVERED BY N INSULATING LAYER IS IMPROVED BY THERMALLY GROWING AT LEAST PART OF THE INSULATING LAYER IN AN ATMOSPHERE COMPRISING OXYGEN AND HYDROGEN CHLORIDE, AND SUBSTANTIALLY FREE OF WATER VAPOR. THE DEVICE IS HEATED IN THIS ATMOSPHERE TO ESTABLISH A GRADIENT FOR OUT-DIFFUSION OF CERTAIN DELETERIOUS METALS FROM THE DEVICE.
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