公开(公告)号：US4380069A

公开(公告)日：1983-04-12

申请号：US217796

申请日：1980-12-18

Applicant: Glenn A. Reitmeier ,  Frank J. Marlowe

Inventor： Glenn A. Reitmeier ,  Frank J. Marlowe

IPC: G06F11/10 ,  G11B20/14 ,  G11B20/18 ,  H03M13/00 ,  H03M13/27 ,  H04N5/94 ,  G06F11/12

CPC classification number: G11B20/1426 ,  G11B20/1876

Abstract: In a transmission channel, such as a tape recorder, errors in code words usually occur in bursts. Further, it is usually possible to detect only some of the erroneous code words. To conceal undetected erroneous code words, concealment starts before, and continues after, a detected erroneous code word. Thus the undetected erroneous code words in an error burst have a high probability of being concealed.

Abstract translation: 在诸如磁带录音机的传输通道中，代码字中的错误通常在突发中出现。 此外，通常可以仅检测一些错误代码字。 为了隐藏未检测到的错误代码字，在检测到的错误代码字之前和之后开始隐藏。 因此，错误突发中未检测到的错误代码字具有被隐藏的高概率。

公开(公告)号：US4697197A

公开(公告)日：1987-09-29

申请号：US786888

申请日：1985-10-11

Applicant: Joseph Dresner

Inventor： Joseph Dresner

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/15 ,  H01L29/16 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/78687 ,  H01L29/154 ,  H01L29/7783

Abstract: A transistor has a superlattice in the channel region. The superlattice has alternate interleaved layers of undoped wide and narrow bandgap materials with the layers extending in a direction parallel to the channel region. Preferably a narrow band gap layer is adjacent a gate insulator to provide maximum increase in mobility.

Abstract translation: 晶体管在沟道区域具有超晶格。 超晶格具有未掺杂的宽带和窄带隙材料的交替交替层，其中层在平行于沟道区的方向上延伸。 优选地，窄带隙层与栅极绝缘体相邻，以提供最大的迁移率增加。

公开(公告)号：US4417296A

公开(公告)日：1983-11-22

申请号：US190985

申请日：1980-10-26

Applicant: Robert L. Schelhorn

Inventor： Robert L. Schelhorn

IPC: H05K1/02 ,  H05K1/05 ,  H05K3/34 ,  H05K7/10 ,  H05K1/18

CPC classification number: H05K3/3442 ,  H05K1/0204 ,  H05K1/0271 ,  H05K3/341 ,  H05K7/1053 ,  H01L2224/32188 ,  H01L2924/01078 ,  H01L2924/01079 ,  H05K1/053 ,  H05K2201/09054 ,  H05K2201/09663 ,  H05K2201/09781 ,  H05K2201/10719 ,  H05K2201/10727 ,  H05K2201/10969 ,  H05K2203/048 ,  Y02P70/613 ,  Y10T29/4913 ,  Y10T29/49133

Abstract: A method (and the resulting article) comprises the step of providing a surface mounted package connector including a thermal buffer pad. Preferably the surface mounted package is mounted on a circuit board having preselected circuitry thereon. The present method provides a mounting capable of withstanding severe temperature cycling and thermal shocks.

Abstract translation: 一种方法（以及最终的制品）包括提供包括热缓冲垫的表面安装的封装连接器的步骤。 优选地，表面安装封装安装在其上具有预选电路的电路板上。 本方法提供了能够承受严重的温度循环和热冲击的安装。

公开(公告)号：US4266159A

公开(公告)日：1981-05-05

申请号：US80104

申请日：1979-09-28

Applicant: Wieslaw W. Siekanowicz

Inventor： Wieslaw W. Siekanowicz

IPC: H01J29/46 ,  H01J31/12 ,  H01J29/08

CPC classification number: H01J31/124

Abstract: A cathodoluminescent display device is composed of a plurality of channels. Each of the channels includes spaced guide meshes between which electrons from an electron gun are propagated as beams. At the end of the channels away from the electron gun is a collector and a deflection electrode. The guide meshes are extended between the collector and deflection electrode. Collection apertures in the extended portions pass electrons to the collector. Collection of the electrons by the collector generates a signal which is sensed and used to maintain uniformity of the characteristics of the beams.

Abstract translation: 阴极发光显示装置由多个通道构成。 每个通道包括间隔开的引导网格，电子枪的电子之间以梁为单位传播。 在远离电子枪的通道的末端是收集器和偏转电极。 引导网格在收集器和偏转电极之间延伸。 扩展部分中的收集孔径将电子传递到收集器。 收集器收集电子产生的信号被感测并用于保持光束特性的均匀性。

公开(公告)号：US4264843A

公开(公告)日：1981-04-28

申请号：US79254

申请日：1979-09-27

Applicant: Fred G. Hammersand

Inventor： Fred G. Hammersand

IPC: H01J23/05 ,  H01J25/50

CPC classification number: H01J23/05

Abstract: A magnetron includes an evacuated envelope having a sealing flange attached thereto, a filament electrode within the envelope and an anode electrode surrounding the filament electrode. One end of the filament electrode is electrically connected to a filament flange assembly. The other end of the filament electrode is connected to a filament post assembly which is insulated from the filament flange assembly. The filament flange assembly has a radially projecting, substantially flat annular sealing flange extending therefrom. The annular sealing flange of the filament flange assembly is hermetically joined to the envelope. Electrical connections to the filament electrode are made by means of a pair of substantially rectangular terminals having a flat contact surface attached to the filament flange assembly and the filament post assembly respectively.

Abstract translation: 磁控管包括具有附接到其上的密封凸缘的抽真空的外壳，外壳内的灯丝电极和围绕灯丝电极的阳极电极。 灯丝电极的一端电连接到灯丝凸缘组件。 灯丝电极的另一端连接到与灯丝凸缘组件绝缘的灯丝柱组件。 灯丝凸缘组件具有从其延伸的径向突出的，基本平坦的环形密封凸缘。 灯丝凸缘组件的环形密封凸缘气密地接合到外壳。 与丝状电极的电连接通过一对基本上矩形的端子制成，该端子具有分别连接到灯丝凸缘组件和灯丝柱组件的平坦接触表面。

公开(公告)号：US4259609A

公开(公告)日：1981-03-31

申请号：US952999

申请日：1978-10-20

Applicant: Alfred Month ,  Timothy E. Benner

Inventor： Alfred Month ,  Timothy E. Benner

IPC: H01J31/38 ,  G02B5/14

CPC classification number: H01J31/38

Abstract: A light conductor is utilized in a vidicon type pick-up tube to transmit light from a light source to the tube target for biasing the dark current of the target. The light conductor is preferably a bifurcated glass rod having a stem and two branches defining a crotch region. The light that is transmitted through the stem into the branches is selectively attenuated by filling in the crotch region with either glass redistributed from portions of the stem and branches or with additional glass. By controlling the light transmission with predetermined amounts of glass, the illumination and, hence, the dark current of the target can also be controlled.

Abstract translation: 一个光导体被用在一个摄像头类型的拾取管中，以将来自光源的光透射到管目标，以偏置目标的暗电流。 光导体优选是具有茎的分叉玻璃棒和限定裆部区域的两个分支。 通过从茎和分支的部分或附加玻璃再分配的玻璃中填充裆部区域，将通过茎透射到枝中的光被选择性地衰减。 通过以预定量的玻璃控制光透射，也可以控制目标的照明和暗电流。

公开(公告)号：US4256052A

公开(公告)日：1981-03-17

申请号：US81193

申请日：1979-10-02

Applicant: Raymond V. Johnson ,  Dennis P. Biondi

Inventor： Raymond V. Johnson ,  Dennis P. Biondi

IPC: C23C14/54 ,  C30B25/10 ,  C23C13/08 ,  B05C5/00 ,  F27D13/00 ,  F27D15/02

CPC classification number: C30B25/10 ,  C23C14/541

Abstract: A diffusion furnace having particular utility in the processing of SOS devices wherein a temperature gradient, per unit length of furnace tube, is provided at a section of a reaction tube extending between the furnace and the scavenger and load-unload chambers in order to minimize the thermal shock to which a sapphire wafer may be subject, either at the commencement of processing when the wafer is first introduced into the furnace or at the conclusion of the processing as the wafer is being withdrawn from the furnace.

Abstract translation: 一种在加工SOS装置中具有特别实用性的扩散炉，其中在炉子与清除剂和负载卸载室之间延伸的反应管的一部分处设置有每单位长度的炉管的温度梯度，以便最小化 在晶片首次引入炉中时或在晶片从炉中取出时，在加工开始时可能会遇到蓝宝石晶片的热冲击。

公开(公告)号：US4186032A

公开(公告)日：1980-01-29

申请号：US830030

申请日：1977-09-02

Applicant: William E. Ham

Inventor： William E. Ham

IPC: C30B33/00 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04 ,  B08B5/00

CPC classification number: H01L21/02046 ,  C30B33/00 ,  H01L21/67028 ,  Y10S134/902

Abstract: A semiconductor wafer is cleansed of loose foreign surface matter and chemical impurities near the surface in an apparatus which passes superheated steam over the wafer. Condensate is permitted to form and drip off the wafer. After rising above 100.degree. C. the wafer becomes dry, and is removed from the apparatus and then permitted to cool.

Abstract translation: 半导体晶片在通过晶片上的过热蒸汽的设备中清洁表面附近的疏松的异物表面物质和化学杂质。 允许冷凝液形成和滴落晶片。 在100℃升高之后，晶片变干，从设备中取出，然后冷却。

公开(公告)号：US4108686A

公开(公告)日：1978-08-22

申请号：US818065

申请日：1977-07-22

Applicant: Lewis Alfred Jacobus, Jr.

Inventor： Lewis Alfred Jacobus, Jr.

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L29/66568 ,  H01L29/1045 ,  H01L29/66583 ,  H01L29/78 ,  H01L29/7838 ,  Y10S438/919

Abstract: An insulated gate field effect transistor having spaced highly doped source and drain regions with less highly doped source and drain extensions, which define the ends of the channel of the transistor, has both the source and drain extensions and the channel of the transistor defined in a controllable manner by the steps of forming a continuous zone of the same conductivity type as the source and drain regions in the space between these two regions and then counterdoping a portion of this layer.

Abstract translation: 具有间隔高度掺杂的源极和漏极区域的绝缘栅场效应晶体管具有较低掺杂的源极和漏极延伸部分，其限定了晶体管的沟道的端部，其具有源极和漏极延伸部分，并且晶体管的沟道限定在 通过形成与这两个区域之间的空间中的源极和漏极区域相同的导电类型的连续区域，然后对该层的一部分进行反掺杂的步骤的可控方式。

公开(公告)号：US4105468A

公开(公告)日：1978-08-08

申请号：US805153

申请日：1977-06-09

Applicant: Robert A. Geshner ,  Joseph Mitchell, Jr.

Inventor： Robert A. Geshner ,  Joseph Mitchell, Jr.

IPC: G03F1/72 ,  H01L21/027 ,  H01L21/306 ,  C23G1/02

CPC classification number: G03F1/72

Abstract: Removal of selected, isolated defects comprised of excess chromium (Cr) or chromium oxide (Cr.sub.2 O.sub.3) from photomasks comprises contacting at least the defect area by a suitable acid and initiating the etch of the defect area by contacting the defect area with a metal probe made from a suitable material. Excess chromium or chromium oxide areas may be isolated by using a laser to separate the areas from areas which are to remain.