摘要:
In a transmission channel, such as a tape recorder, errors in code words usually occur in bursts. Further, it is usually possible to detect only some of the erroneous code words. To conceal undetected erroneous code words, concealment starts before, and continues after, a detected erroneous code word. Thus the undetected erroneous code words in an error burst have a high probability of being concealed.
摘要:
The output of a digital-to-analog (D/A) converter is coupled to the input of a filter. The D/A converter is initialized each time a new digital word is applied to the D/A converter for conversion, whereby each data conversion cycle (T.sub.D) includes an initialization interval (T.sub.I) followed by a conversion interval (T.sub.C). During T.sub.I the output of the D/A converter is driven to a reference level and during T.sub.C to the output of the D/A converter corresponds to the value of the input signal. The input section of the filter stores the D/A output just prior to initialization and, for during T.sub.I, coupling the stored value within the filter for processing while inhibiting the coupling to the filter of the reference level present at the D/A output.
摘要:
A method of sealing an electron gun mount of a cathode-ray tube to a back section thereof comprises the steps of applying a glass frit between an edge of the back section and the mount where the sealing is to be effected, heating the glass frit to a temperature sufficient to cause the frit to become vitreous, thereby sealing the mount to the back section, and flowing a gas containing a reducing agent past the electron gun during the heating step.
摘要:
A current source supplies current to an integrator representative of a difference between the instantaneous and average values of a video signal having a PCM data component time division multiplexed with an analog luminance component. The integrator is enabled during the central portion of each PCM signaling interval and reset to a reference level during initial and terminal portions of the intervals. Asymmetry of the peak-to-peak PCM signal levels with respect to the average signal level tends to result in asymmetrical excursions of the integrator output voltage relative to the reference level. This asymmetry is corrected by means of a charge source that supplied a predetermined quantity of charge continuously or in discrete packets to the integrator during the central portion of each PCM signaling interval. The integrator voltage excursions are thereby equalized and a substantially uniform probability of detection of the PCM data levels may be realized by means of a threshold device having a threshold level substantially equal to the reference level.
摘要:
The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.
摘要:
A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.
摘要:
A semi-planar silicon-on-sapphire composite comprises a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa.
摘要:
The method is used to determine whether holes etched into a dielectric layer which has been formed on a surface of a semiconductor wafer are open. A plurality of specimen holes are formed in a selected portion of the wafer simultaneously with the formation of the holes to be tested. The specimen holes are then contacted with an electrolytic probe, and the wafer is contacted with an output probe. The resistance, through the wafer, between the electrolytic probe and the output probe is determined. Since the resistance is related to the amount of dielectric material remaining in the hole, a non-destructive determination may be made as to whether the device should be subjected to additional etching.
摘要:
A highly sensitive light detector is described which employs two interdigitated PN junction light detectors, one of which is covered by an opaque material. The one covered by opaque material is used as a standard for eliminating dark current efffects.
摘要:
A conventional three-gun assembly for a color cathode ray tube is modified by eliminating the usual radial convergence cup, mounting the radial convergence pole pieces on the forward ends of the last focus electrodes, and providing each gun with a combination magnetic shield and electrode support member in the form of an open frame of magnetic metal mounted on the insulator support rods and having one side attached to the last focus electrode, an opposite side shielding the associated pole pieces from the other pole pieces, and two other connecting sides. The last focus electrode may be one of two tubular electrodes of small diameter having outwardly-flared ends adjacent to each other.