A PROCESS WHICH INCLUDES THE PREPARATION OF A SUBSTRATE AND SUBSEQUENT EPITAXIAL DEPOSITION OF GERMANIUM ON THE SUBSTRATE IS DESCRIBED. PREPARATION OF THE SUBSTRATE, EITHER GERMANIUM OR GALLIUM ARSENIDE, INCLUDES A CHEMICAL TREATMENT STEP TO REMOVE SURFACE FILMS, RAPID QUENCHING, RINSING AND DRYING STEPS, AND A HEATING STEP PRIOR TO DEPOSITION. DEPOSITION OF GERMANIUM IS CARRIED OUT IN AN OPEN TUBE DISPROPORTIONATION SYSTEM, BY INTRODUCING A GERMANIUM HALIDE SPECIE WHICH IS CAPABEL OF DISPROPORTIONATING AT A DEPOSITION SITE IN CONCENTRATIONS AND AT VELOCITIES SUCH THAT THE DEPOSITION OF GERMANIUM TENDS TO BE SURFACE LIMITED RATHER THAN MASS TRANSPORT LIMITED. THE DEPOSITION, PREFERABLY CARRIED OUT ON A (110) ORIENTED SUBSTRATE, IS EPITAXIAL, SMOOTH AND SHINY AND IS SUITABLE FOR SUBSEQUENT PROCESSING REQUIRING PHOTOGRAPHIC TECHNIQUES.

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