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    Semiconductor preparation and deposition process
    2.
    发明授权
    Semiconductor preparation and deposition process 失效
    半导体制备和沉积过程

    公开(公告)号：US3577286A

    公开(公告)日：1971-05-04

    申请号：US3577286D

    申请日：1967-10-11

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

    IPC: C01G17/04 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L7/36 ,  C23C11/00 ,  H01L7/00

    CPC classification number: H01L21/02381 ,  C01G17/04 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02661 ,  Y10S438/974

    Abstract: A PROCESS WHICH INCLUDES THE PREPARATION OF A SUBSTRATE AND SUBSEQUENT EPITAXIAL DEPOSITION OF GERMANIUM ON THE SUBSTRATE IS DESCRIBED. PREPARATION OF THE SUBSTRATE, EITHER GERMANIUM OR GALLIUM ARSENIDE, INCLUDES A CHEMICAL TREATMENT STEP TO REMOVE SURFACE FILMS, RAPID QUENCHING, RINSING AND DRYING STEPS, AND A HEATING STEP PRIOR TO DEPOSITION. DEPOSITION OF GERMANIUM IS CARRIED OUT IN AN OPEN TUBE DISPROPORTIONATION SYSTEM, BY INTRODUCING A GERMANIUM HALIDE SPECIE WHICH IS CAPABEL OF DISPROPORTIONATING AT A DEPOSITION SITE IN CONCENTRATIONS AND AT VELOCITIES SUCH THAT THE DEPOSITION OF GERMANIUM TENDS TO BE SURFACE LIMITED RATHER THAN MASS TRANSPORT LIMITED. THE DEPOSITION, PREFERABLY CARRIED OUT ON A (110) ORIENTED SUBSTRATE, IS EPITAXIAL, SMOOTH AND SHINY AND IS SUITABLE FOR SUBSEQUENT PROCESSING REQUIRING PHOTOGRAPHIC TECHNIQUES.

    D R A W I N G

    Glass fabrication process
    3.
    发明授权
    Glass fabrication process 失效
    玻璃制造工艺

    公开(公告)号：US3862831A

    公开(公告)日：1975-01-28

    申请号：US35302673

    申请日：1973-04-20

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  REISMAN ARNOLD

    IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C07C17/04

    CPC classification number: C03C3/102 ,  C03B19/00 ,  C03C3/072 ,  C03C17/02 ,  H01J2211/38

    Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

    Abstract translation: 因此，在所需的现有衬底结构上从混合玻璃料例如两个起始玻璃原位制造玻璃的方法。 混合玻璃料包括低玻璃化转变温度玻璃和较高玻璃化转变温度的玻璃，该玻璃独特地能够在其整个组成范围内形成连续的玻璃相。 在热循环期间，低玻璃化转变温度玻璃流出并溶解较高的玻璃化转变温度玻璃，从而原位合成新的玻璃。 通过原位方法形成玻璃所需的温度小于首先在外部首先平衡的玻璃相同的组合物然后以玻璃料形式施加到现有的衬底结构并在其上流出所需的温度。 原位合成的新玻璃在高于低玻璃化转变温度玻璃的温度下软化并流动，并且低于较高玻璃化转变温度玻璃的温度，并且在两个起始玻璃之间呈现玻璃化转变温度。

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