Invention Grant
- Patent Title: Constrainment of autodoping in epitaxial deposition
- Patent Title (中): 外来沉积物中的自动化约束
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Application No.: US3660180DApplication Date: 1969-02-27
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Publication No.: US3660180APublication Date: 1972-05-02
- Inventor: WAJDA EDWARD S
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US80281069 1969-02-27
- Main IPC: C30B25/02
- IPC: C30B25/02 ; H01L21/00 ; H01L21/20 ; H01L21/205 ; H01L7/36 ; C23C11/00 ; H01L5/00
Abstract:
Autodoping is minimized during epitaxial deposition by sputtering a primary or initial film on a doped semiconductor substrate prior to epitaxial deposition.
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