公开(公告)号：US3036898A

公开(公告)日：1962-05-29

申请号：US80995659

申请日：1959-04-30

Applicant: IBM

Inventor： BROCK GEOFFREY E ,  WAJDA EDWARD S

IPC: C30B13/24

CPC classification number: C30B13/24 ,  Y10S117/90 ,  Y10T117/108 ,  Y10T117/1088

公开(公告)号：US3355334A

公开(公告)日：1967-11-28

申请号：US44433065

申请日：1965-03-31

Applicant: IBM

Inventor： DHAKA VIR A ,  WAJDA EDWARD S

IPC: H01L21/22

CPC classification number: H01L21/22 ,  Y10S148/039 ,  Y10S148/045 ,  Y10S438/965

公开(公告)号：US3649388A

公开(公告)日：1972-03-14

申请号：US3649388D

申请日：1968-11-04

Applicant: IBM

Inventor： JOSHI MADHUKAR L ,  PLATT ALAN ,  WAJDA EDWARD S

IPC: C23C16/44 ,  C30B31/06 ,  E04F17/02 ,  H01L21/00 ,  H01L21/22 ,  H01L21/223 ,  H01L21/306 ,  H01L7/44

CPC classification number: H01L21/223 ,  E04F17/02 ,  H01L21/00 ,  H01L21/306 ,  Y10S148/003 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/079

Abstract: A METHOD OF CONCURRENTLY FORMING A SHALALOW, FLAT FRONT DIFFUSION LAYER AND A HIGH SURFACE IMPURITY CONCENTRATION IN A SEMICONDUCTOR WAFER, BY PREHEATING THE WAFER TO DIFFUSION TEMPERATURE IN AN ATMOSPHERE THAT WILL NOT FORM ANY FILM, SUCH AS AN OXIDE OR NITRIDE LAYER, UPON TH SURFACE OF THE SEMICONDUCTOR WAFER; CARRYING THE DIFFUSANT,

SUCH AS AS OR P, IN A CARRIER GAS SUCH AS ARGON THAT WILL NOT INTERFERE BY LAYER FORMATION WITH THE DIFFUSION; DIFFUSING THE AS OR P TO A DEPTH NOT EXCEEDING 20 MICROINCHES; AND THEN COOLING IN AN INERT ATOMSPHERE.

公开(公告)号：US3202543A

公开(公告)日：1965-08-24

申请号：US19945062

申请日：1962-06-01

Applicant: IBM

Inventor： THUN RUDOLF E ,  WAJDA EDWARD S

IPC: C23C14/04 ,  H01J19/30 ,  H01L21/00 ,  H01L23/482 ,  H01L27/00

CPC classification number: H01L23/482 ,  C23C14/042 ,  H01J19/30 ,  H01J2893/0019 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3660180A

公开(公告)日：1972-05-02

申请号：US3660180D

申请日：1969-02-27

Applicant: IBM

Inventor： WAJDA EDWARD S

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L7/36 ,  C23C11/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  C30B25/02 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/158 ,  Y10S438/916

Abstract: Autodoping is minimized during epitaxial deposition by sputtering a primary or initial film on a doped semiconductor substrate prior to epitaxial deposition.

Abstract translation: 在外延沉积之前，通过在掺杂半导体衬底上溅射初级或初始膜，在外延沉积期间使自掺杂最小化。

公开(公告)号：US3406366A

公开(公告)日：1968-10-15

申请号：US52148766

申请日：1966-01-13

Applicant: IBM

Inventor： RICHARD KONTRIMAS ,  KROHL ROBERT J ,  WAJDA EDWARD S

IPC: G01K7/22 ,  H01C7/02 ,  H01C7/04 ,  H01L21/00 ,  H01L49/02

CPC classification number: H01L21/00 ,  G01K7/22 ,  G01K7/223 ,  H01C7/022 ,  H01C7/04 ,  H01L49/02 ,  Y10S148/085 ,  Y10S148/15