发明授权
- 专利标题： Multi-component semiconductor network and method for making same
- 专利标题（中）： 多组分半导体网络及其制造方法
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申请号： US3740276D申请日： 1970-08-24
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公开(公告)号： US3740276A公开(公告)日： 1973-06-19
- 发明人: BLAN K
- 申请人： TEXAS INSTRUMENTS INC
- 专利权人： Texas Instruments Inc
- 当前专利权人： Texas Instruments Inc
- 优先权： US6664670 1970-08-24
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/3065 ; H01L21/761 ; H01L21/8222 ; H01L7/36
摘要：
VARIOUS COMPONENTS OF THE NETWORK ENABLING HIGH SWITCHING SPEEDS.
A PROCESS IS DISCLOSED FOR FABRICATING A MULTI-COMPONENT NETWORK UTILIZING A BODY OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL. THE PROCESS INCLUDES SELECTIVELY ETCHING THE SEMICONDUCTOR SUBSTRATE AND REFORMING IT BY EPITEXIAL DEPOSITION OF SEMICONDUCTOR MATERIAL HAVING DIFFERENT IMPURITY CONCETRATION OR CONDUCTIVITY TYPE. THE PROCESS PROVIDES IMPROVED ISOLATION JUNCTIONS BETWEEN THE
A PROCESS IS DISCLOSED FOR FABRICATING A MULTI-COMPONENT NETWORK UTILIZING A BODY OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL. THE PROCESS INCLUDES SELECTIVELY ETCHING THE SEMICONDUCTOR SUBSTRATE AND REFORMING IT BY EPITEXIAL DEPOSITION OF SEMICONDUCTOR MATERIAL HAVING DIFFERENT IMPURITY CONCETRATION OR CONDUCTIVITY TYPE. THE PROCESS PROVIDES IMPROVED ISOLATION JUNCTIONS BETWEEN THE
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