The invention relates to a semiconductor device having a Hall element. In order to reduce the offset voltage between the connection contacts for deriving the Hall signals and in order to increase the stability, the Hall element shows a number of subHall elements which are arranged parallel to each other. The Hall bodies of the sub-Hall elements, viewed on the surface of the semiconductor body, are situated beside each other in the semiconductor body and show different directions of current. The semiconductor body may be constituted by an epitaxial layer of ntype silicon on a substrate of p-type silicon. The Hall element may be manufactured by using methods which are generally known in manufacturing integrated circuits.