公开(公告)号：US6144442A

公开(公告)日：2000-11-07

申请号：US90034

申请日：1998-06-10

Applicant: Jacob J. 'T Mannetje ,  Frank Auer

Inventor： Jacob J. 'T Mannetje ,  Frank Auer

IPC: F16F15/023 ,  F16F15/027 ,  G03F7/20 ,  H01L21/027 ,  G03B27/60 ,  G03B27/42

CPC classification number: F16C32/06 ,  F16F15/0232 ,  F16F15/0275 ,  G03F7/70691 ,  G03F7/70833

Abstract: Support device (53) provided with a first part (69) and a second part (71) which is supported relative to the first part by means of a gas spring (73) having a pressure chamber (75). A gas supply (117), which compensates for gas leakage from the pressure chamber (75) during operation, is connected to an intermediate space (119) which is in communication with the pressure chamber (75) via a pneumatic restriction (121). The gas pressure present in the intermediate space (119) is held as constant as possible during operation by means of a control loop (123), to prevent transmission of pressure fluctuations which are present in the gas supply (117) to the pressure chamber (75) as much as possible. Such pressure fluctuations are undesirable in the pressure chamber because they cause mechanical vibrations in the second part of the support device and the device to be supported. The support device is used in a lithographic device for the support of a frame (39) with respect to a base (37), the frame (39) supporting a focusing unit (5).

Abstract translation: 支撑装置（53）具有第一部分（69）和第二部分（71），第二部分（71）通过具有压力室（75）的气体弹簧（73）相对于第一部分被支撑。 在操作期间补偿来自压力室（75）的气体泄漏的气体供给（117）通过气动限制（121）连接到与压力室（75）连通的中间空间（119）。 存在于中间空间119中的气体压力在操作期间通过控制回路123保持为恒定，以防止气体供应（117）中存在于压力室（117）中的压力波动 75）。 这种压力波动在压力室中是不期望的，因为它们在支撑装置的第二部分和被支撑的装置中引起机械振动。 支撑装置用于光刻设备中，用于相对于基座（37）支撑框架（39），框架（39）支撑聚焦单元（5）。

公开(公告)号：US5264738A

公开(公告)日：1993-11-23

申请号：US891314

申请日：1992-05-29

Applicant: Hendrikus J. M. Veendrick ,  Andreas A. J. M. Van Den Elshout ,  Cornelis M. Huizer

Inventor： Hendrikus J. M. Veendrick ,  Andreas A. J. M. Van Den Elshout ,  Cornelis M. Huizer

IPC: H03K3/037 ,  H03K3/3562 ,  H03K5/13 ,  H03K3/26 ,  H03K19/096

CPC classification number: H03K3/0375 ,  H03K3/0372 ,  H03K3/35625

Abstract: The transfer gate between the master section and the slave section in a flip-flop circuit includes a circuit for reducing the sensitivity to slow clock edges and clock skew. This is accomplished by prolonging the transfer time for data from the master to the salve section of the flip-flop circuit.

公开(公告)号：US5263076A

公开(公告)日：1993-11-16

申请号：US853367

申请日：1992-03-18

Applicant: Manfred Elff ,  Dietrich Dirks ,  Wilfried Pfeiffer ,  Siegfried Schmidt

Inventor： Manfred Elff ,  Dietrich Dirks ,  Wilfried Pfeiffer ,  Siegfried Schmidt

IPC: A61B6/12 ,  A61B17/22 ,  A61B17/225 ,  A61B17/00

CPC classification number: A61B17/2255 ,  A61B6/12 ,  A61B6/4028

Abstract: A lithotripsy workstation, comprises a patient supporting device (1), a shockwave source (4) for generating shockwaves which are focused onto a point (focus) (6) fixed in space, an X-ray source (10) which irradiates the focus (6) from at least two defined positions, and an image detector (12) which detects the X-ray image produced by the X-ray source (10). The cost and the weight of the workstation can be reduced in that a marker (16) which can be displayed in the X-ray image is secured to the X-ray source (10), which marker is situated, at least in the two positions, on the connecting line between the focal spot (11) of the X-ray source (10) and the focus (6).

Abstract translation: 一种碎石工作站，包括患者支撑装置（1），用于产生聚焦在固定在空间上的点（焦点）（6））上的冲击波的冲击波源（4），照射焦点的X射线源（10） （6），以及检测由X射线源（10）产生的X射线图像的图像检测器（12）。 可以减少工作站的成本和重量，因为可以将显示在X射线图像中的标记（16）固定到该标记所在的X射线源（10），至少在两个 位置，位于X射线源（10）的焦斑（11）和焦点（6）之间的连接线上。

公开(公告)号：US5254863A

公开(公告)日：1993-10-19

申请号：US776107

申请日：1991-10-15

Applicant: Stephen J. Battersby

Inventor： Stephen J. Battersby

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/10 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80

CPC classification number: H01L29/7783 ,  H01L29/1075 ,  H01L29/205

Abstract: A semiconductor device is formed by a semiconductor body (1) having a substrate (2) on which is provided a channel-defining region (10) extending between input and output regions (20) and (21). The channel-defining region (10) has a channel layer (11) forming a heterojunction (12) with at least one barrier layer (13) to form within the channel layer (11) a two-dimensional free charge carrier gas (14) of one conductivity type for providing a conduction channel (14) controllable by a gate electrode (25). A potential well region (30) is provided between the substrate (2) and the channel-defining region (10). The potential well region (30) has at least one potential well-defining layer (31) forming heterojunctions (32) with adjacent barrier layers (33) to define a potential well which is empty of free charge carriers of the one conductivity type when no voltage is applied between the input and output regions (20 and 21) and which is sufficiently deep and wide to trap hot charge carriers of the one conductivity type which are emitted from the channel-defining region (10) towards the substrate (1) when a high lateral electrical field exists in the channel-defining region (10), thereby constraining the hot charge carriers near to the gate electrode and enabling an improved output impedance when the device is an FET.

公开(公告)号：US5251375A

公开(公告)日：1993-10-12

申请号：US848813

申请日：1992-03-10

Applicant: Jacobus Crucq ,  Marinus J. J. Dona ,  Wilhelmus M. Walraven

Inventor： Jacobus Crucq ,  Marinus J. J. Dona ,  Wilhelmus M. Walraven

IPC: B26B19/04 ,  B26B19/26 ,  B26B19/12

CPC classification number: B26B19/26

Abstract: A shaving apparatus comprises a housing provided with a first shaving member having a first cutting edge and with a second shaving member having a second cutting edge, which second shaving member is drivable relative to the first shaving member, the movement of the second cutting edge relative to the first cutting edge in a plane transverse to the cutting edges being composed of the movements in two main directions in this plane. The second shaving member is provided with a carrier mounted in the housing so as to be movable in both main directions and the carrier comprises two surfaces which extend transversely of the main directions and which engage against a rotatably drivable cam disc.

公开(公告)号：US5250473A

公开(公告)日：1993-10-05

申请号：US739624

申请日：1991-08-02

Applicant: Jacobus W. M. Smits

Inventor： Jacobus W. M. Smits

IPC: H01L21/314 ,  C23C16/40 ,  H01L21/316 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205

CPC classification number: H01L21/02271 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612

Abstract: A LPCVD-process for SiO.sub.2 -layers at a deposition temperature between 420.degree. C. and 500.degree. C., using a silane compound in which only one H and one Cl-atom is bonded to the Si-atom yields a very satisfactory uniformity of the layer thickness. An example of such a silane compound is dimethyl monochlorosilane.

公开(公告)号：US5240879A

公开(公告)日：1993-08-31

申请号：US848806

申请日：1992-03-10

Applicant: Leendert De Bruin

Inventor： Leendert De Bruin

IPC: H01L21/28 ,  C23C18/31 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32134 ,  H01L21/76879

Abstract: A semiconductor body has a surface structure (10) with an insulating layer (11) through which is formed an opening (12) defining a side wall (13) of insulating material bounding an exposed surface area (14a) of a region (14). An activating layer (15) is provided on the exposed surface area (14a) and the side wall (13) of the opening (12), and electrically conductive material deposited on the activating layer (15) to form an electrically conductive region (16) in the opening (12). The activating layer is provided so that the material (15a) on the sidewall (13) has different composition from the material (15b) on the exposed surface area (14a) and is selectively etched to remove the material (15a) from the sidewall (13) of the opening (12) leaving only the activating layer portion (15b) on the surface area (14a) of the underlying region so that little or no deposition of the electrically conductive material occurs on the opening sidewall (13), thereby inhibiting sideways growth of the electrically conductive material and thus avoiding or at least reducing the possibility of voids being formed in the electrically conductive region.

公开(公告)号：US5240550A

公开(公告)日：1993-08-31

申请号：US757379

申请日：1991-09-10

Applicant: Ralf-Dieter Boehnke ,  Hans Dammann ,  Gert Rabe

Inventor： Ralf-Dieter Boehnke ,  Hans Dammann ,  Gert Rabe

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: A groove is formed in a substrate layer by ion etching. The substrate layer comprises a top layer having an etch rate S1 and a bottom layer having a different etch rate S2, in which first, grooves are formed having an initial depth which differs from the desired depth, after which the etching process is carried out without using a mask until the desired depth of the groove is attained.

Abstract translation: 通过离子蚀刻在衬底层中形成凹槽。 衬底层包括具有蚀刻速率S1和底层具有不同蚀刻速率S2的顶层，其中首先形成具有不同于所需深度的初始深度的沟槽，之后进行蚀刻处理而没有 使用掩模直到达到所需凹槽的深度。

公开(公告)号：US5239591A

公开(公告)日：1993-08-24

申请号：US725144

申请日：1991-07-03

Applicant: Surendra Ranganath

Inventor： Surendra Ranganath

IPC: A61B5/0452 ,  A61B5/055 ,  G01R33/48 ,  G01R33/54 ,  G01R33/56 ,  G01R33/563

CPC classification number: G01R33/563 ,  G01R33/56

Abstract: Contours are extracted from corresponding features the left ventricular blood pool-endocardium interfaces, of a plurality of images collected as a multi-phase multi-slice cardiac Magnetic Resonance Imaging (MRI) study which are accessible by a computer in response to user input to the computer of a seed contour identifying the contour feature to be extracted in an initial image at a middle slice position and a predetermined phase position, namely end of diastole. From this as the only contour inputted by the user, contours are extracted from each image by a sequence of automatic propagation of determinations of extracted, or final contours by forming from a final contour for an image, a seed contour for a not yet processed image which immediately adjoins in slice or phase position. For each image use is made of a seed-to-final propagation function in the form of an energy minimizing active contour function which has internal energy due to settable resistances to stretching and bending and image derived energy related to the gradient of the image. The final contour developed in the initial image is passed as a provisional contour to images which immediately adjoin in phase position where they are further propagated by an in-phase provisional-to-seed propagation function and are passed to images which immediately adjoin in slice position, where they are further propagated by an in-slice provisional-to-seed propagation function. After extraction of the contours, and possible automatic post-processing for correction thereof, these contours are used by a computational or visualization application, such as the computation of an ejection fraction.

公开(公告)号：US5239179A

公开(公告)日：1993-08-24

申请号：US764665

申请日：1991-09-24

Applicant: Ian M. Baker

Inventor： Ian M. Baker

IPC: H01L27/14 ,  G01J5/08 ,  H01L25/04 ,  H01L27/146 ,  H01L31/10

CPC classification number: H01L25/042 ,  H01L27/14627 ,  H01L27/1465 ,  G01J5/08 ,  H01L2924/0002 ,  H01L2924/3011

Abstract: In an infrared detector device for viewing an object or scene at more than one wavelength, the detector elements (10 and 20) are optimized to have appropriately different infrared responses by being formed in accordance with the invention in different levels (1 and 2) of different material on a substrate (3). Infrared concentrators (55) such as immersion lenses, light-pipes and/or reflectors collect incident radiation (50) over an area larger than the active portion of the associated detector element (10 and/or 20) and concentrate the radiation (50) onto the active portions. The arrangement adopted in accordance with the invention provides adequate space for at least one connection (15) of each upper-level detector element (10) to extend to the substrate (3) through an area of the lower level (2) which is located between the lower-level active portions on which the radiation (50) is concentrated by the associated concentrators (55). This upper-level connection (15) may extend via an island (28) separated from the active portions ( 22,23) of the lower level (2) by a gap (40), or it may extend on a side-wall of the lower-level detector element (20) when this side-wall is insulated or separated by a p-n junction from the active portions of the detector element (20). The different-response elements (10 and 20) may be arranged one above the other or one between the others when viewed in plan view.