发明授权
US3943622A Application of facet-growth to self-aligned Shottky barrier gate field
effect transistors
失效
小面生长对自对准肖特基势垒栅场效应晶体管的应用
- 专利标题： Application of facet-growth to self-aligned Shottky barrier gate field effect transistors
- 专利标题（中）： 小面生长对自对准肖特基势垒栅场效应晶体管的应用
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申请号： US517284申请日： 1974-10-22
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公开(公告)号： US3943622A公开(公告)日： 1976-03-16
- 发明人: He B. Kim , Michael C. Driver
- 申请人： He B. Kim , Michael C. Driver
- 申请人地址： PA Pittsburgh
- 专利权人： Westinghouse Electric Corporation
- 当前专利权人： Westinghouse Electric Corporation
- 当前专利权人地址： PA Pittsburgh
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/24 ; H01L29/00 ; H01L29/812 ; H01L21/205 ; H01L21/28 ; H01L29/48
摘要：
A semiconductor device and particularly a self-aligned Schottky barrier gate field-effect transistor is made by epitaxial growth of facets corresponding to the source and drain regions on a surface of a semiconductor body through spaced apart preferably elongated windows in a masking layer and overgrowing edge portions of the masking layer at the windows to form overgrown portions on the facets. The channel region of the transistor is previously formed in the semiconductor body, preferably by epitaxial growth of a layer on a surface of a semiconductor body having a semi-insulating layer adjoining the surface. After removal of the masking layer, the Schottky barrier gate is self-aligned by deposition of metal on the unshielded portions of the planar surface between the facets.
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