发明授权
US3956025A Semiconductor devices having surface state control and method of
manufacture
失效
具有表面状态控制的半导体器件和制造方法
- 专利标题： Semiconductor devices having surface state control and method of manufacture
- 专利标题（中）： 具有表面状态控制的半导体器件和制造方法
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申请号： US454647申请日： 1974-03-25
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公开(公告)号： US3956025A公开(公告)日： 1976-05-11
- 发明人: Hermann Statz , Wolfgang M. Feist
- 申请人： Hermann Statz , Wolfgang M. Feist
- 申请人地址： MA Lexington
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： MA Lexington
- 主分类号： H01J29/45
- IPC分类号： H01J29/45 ; H01L21/00 ; H01L27/00 ; H01L29/00 ; H01L29/06 ; H01L29/78 ; H01L31/00 ; H01L31/0216 ; H01L21/265
摘要：
A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.