发明授权
- 专利标题: Method of doping a semiconductor layer
- 专利标题(中): 掺杂半导体层的方法
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申请号: US595150申请日: 1975-07-11
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公开(公告)号: US3967982A公开(公告)日: 1976-07-06
- 发明人: Heinz-Herbert Arndt , Joachim Burtscher , Gustav Fischer , Ernst Haas , Joachim Martin , Gunter Raab , Manfred Schnoeller
- 申请人: Heinz-Herbert Arndt , Joachim Burtscher , Gustav Fischer , Ernst Haas , Joachim Martin , Gunter Raab , Manfred Schnoeller
- 申请人地址: DT Berlin & Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DT Berlin & Munich
- 优先权: DT2433991 19740715
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; H01L21/261 ; H01L21/263
摘要:
A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.
公开/授权文献
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