发明授权
US3981764A III-V Compound semi-conductor crystal growth from a liquid phase on a
substract including filtering liquid phase
失效
III-V化合物半导体晶体从包括过滤液相在内的液相上生长
- 专利标题： III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase
- 专利标题（中）： III-V化合物半导体晶体从包括过滤液相在内的液相上生长
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申请号： US590336申请日： 1975-06-25
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公开(公告)号： US3981764A公开(公告)日： 1976-09-21
- 发明人: Kazuhiro Ito , Masao Kawamura , Yuichi Ono , Makoto Morioka
- 申请人： Kazuhiro Ito , Masao Kawamura , Yuichi Ono , Makoto Morioka
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA49-91553 19740812
- 主分类号： H05B33/14
- IPC分类号： H05B33/14 ; C30B19/06 ; C30B19/08 ; C30B19/10 ; H01L33/22 ; H01L33/30 ; H05B33/12 ; B01J17/20 ; C01B19/00 ; C01B27/00 ; C01F7/00
摘要：
In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.
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