A light emitting gallium phosphide device comprising a gallium phosphide (GaP) substrate of one conductivity type and at least one GaP layer of the opposite conductivity type formed on said substrate so as to form a P-N junction, wherein, the GaP layer, when impressed with forward voltage, forms light emitting regions, as viewed from above; and a light absorbing layer prepared from noncrystalline (amorphous) or polycrystalline silicon is mounted on at least one plane selected from the group consisting of the back side of the GaP substrate, those portions of the surface of the GaP substrate on which the GaP layer is not formed and the other portions of the surface of the GaP layer than the light emitting regions thereof, thereby attaining a very favorably acceptable monolithic display in high luminance and distinct contrast.