发明授权
US4005450A Insulated gate field effect transistor having drain region containing
low impurity concentration layer
失效
具有包含低杂质浓度层的漏极区域的绝缘栅场效应晶体管
- 专利标题： Insulated gate field effect transistor having drain region containing low impurity concentration layer
- 专利标题（中）： 具有包含低杂质浓度层的漏极区域的绝缘栅场效应晶体管
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申请号： US532923申请日： 1974-12-16
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公开(公告)号： US4005450A公开(公告)日： 1977-01-25
- 发明人: Isao Yoshida , Takeshi Tokuyama , Shigeru Nishimatsu , Takahide Ikeda
- 申请人： Isao Yoshida , Takeshi Tokuyama , Shigeru Nishimatsu , Takahide Ikeda
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA45-40114 19700513
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/265 ; H01L29/00 ; H01L29/78
摘要：
An insulated gate field effect transistor formed on one main surface of a semiconductor substrate comprises a drain region the impurity concentration of which is lower than twice that of the semiconductor substrate and the conductivity type is reverse to that of the substrate and a region of a high impurity concentration, formed in the low impurity concentration region, the conductivity type of which is the same as that of the low impurity concentration region.
公开/授权文献
- US5787483A High-speed data communications modem 公开/授权日：1998-07-28
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