发明授权
US4066880A System for pretesting electronic memory locations and automatically identifying faulty memory sections 失效
用于预测试电子存储器位置并自动识别故障存储器部分的系统

System for pretesting electronic memory locations and automatically
identifying faulty memory sections
摘要:
An MOS RAM read/write memory system has thirty-two 1 .times. 512 bit RAM memory chips arranged in a matrix. The system pretests all data bit locations for each address prior to the entry of any data into that address, and automatically skips an address having a faulty data bit location in it. In addition, the system functions, upon reading out of data information from the memory chips, to uniquely identify any faulty MOS RAM memory chip; so that it may be removed and replaced if desired.
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